BT151_tyrist
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SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D/dt
Critical rate of rise of
V
DM = 67% VDRM(max); Tj = 125 ˚C;
off-state voltage
exponential waveform;
Gate open circuit
50
130
-
V/
µs
R
GK = 100 Ω
200
1000
-
V/
µs
t
gt
Gate controlled turn-on
I
TM = 40 A; VD = VDRM(max); IG = 0.1 A;
-
2
-
µs
time
dI
G/dt = 5 A/µs
t
q
Circuit commutated
V
D = 67% VDRM(max); Tj = 125 ˚C;
-
70
-
µs
turn-off time
I
TM = 20 A; VR = 25 V; dITM/dt = 30 A/µs;
dV
D/dt = 50 V/µs; RGK = 100 Ω
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
BT151 series
Fig.1. Maximum on-state dissipation, P
tot, versus
average on-state current, I
T(AV), where
a = form factor = I
T(RMS)/ IT(AV).
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM, versus pulse width tp, for
sinusoidal currents, t
p ≤ 10ms.
Fig.3. Maximum permissible rms current I
T(RMS) ,
versus mounting base temperature T
mb.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb ≤ 109˚C.
Fig.6. Normalised gate trigger voltage
V
GT(Tj)/ VGT(25˚C), versus junction temperature Tj.
0
1
2
3
4
5
6
7
8
0
5
10
15
a = 1.57
1.9
2.2
2.8
4
BT151
IT(AV) / A
Ptot / W
Tmb(max) / C
125
118.5
112
105.5
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
a
1
10
100
1000
0
20
40
60
80
100
120
BT151
Number of half cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
10
100
1000
BT151
10us
100us
1ms
10ms
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01
0.1
1
10
0
5
10
15
20
25
BT151
surge duration / s
IT(RMS) / A
-50
0
50
100
150
0
5
10
15
BT151
Tmb / C
IT(RMS) / A
109 C
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT151
Tj / C
VGT(Tj)
VGT(25 C)
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Thyristors
BT151 series
Fig.7. Normalised gate trigger current
I
GT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current I
L(Tj)/ IL(25˚C),
versus junction temperature T
j.
Fig.9. Normalised holding current I
H(Tj)/ IH(25˚C),
versus junction temperature T
j.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb, versus
pulse width t
p.
Fig.12. Typical, critical rate of rise of off-state voltage,
dV
D/dt versus junction temperature Tj.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT151
Tj / C
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
0
5
10
15
20
25
30
BT151
VT / V
IT / A
Tj = 125 C
Tj = 25 C
Vo = 1.06 V
Rs = 0.0304 ohms
typ
max
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT145
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
BT151
tp / s
Zth j-mb (K/W)
10us
0.1ms
1ms
10ms
0.1s