DB3_diac
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DB3 /DB4 / DC34
April 1995
TRIGGER DIODES
DO 35
(Glass)
VBO : 32V / 34V / 40V VERSIONS
LOW BREAKOVER CURRENT
FEATURES
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
400
°C/W
Rth (j-l)
Junction-leads
150
°C/W
High reliability glass passivation insuring
parameter stability and protection against
junction contamination.
DESCRIPTION
Symbol
Parameter
Value
Unit
P
Power dissipation on printed circuit
(L = 10 mm)
Ta = 65
°C
150
mW
ITRM
Repetitive peak on-state curren t
tp = 20
µs
F= 100 Hz
2
A
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 125
- 40 to + 125
°C
°C
ABSOLUTE RATINGS (limiting values)
THERMAL RESISTANCES
1/4
Symbol
Parameter
Test Conditions
Value
Unit
DB3
DC34
DB4
VBO
Breakover voltage *
C = 22nF **
see diagram 1
MIN
28
30
35
V
TYP
32
34
40
MAX
36
38
45
[I+VBOI-I-VBOI]
Breakover voltage
symmetry
C = 22nF **
see diagram 1
MAX
± 3
V
I
∆V± I
Dynamic breakover
voltage *
∆I = [IBO to IF=10mA]
see diagram 1
MIN
5
V
VO
Output voltage *
see diagram 2
MIN
5
V
IBO
Breakover current *
C = 22nF **
MAX
100
50
100
µA
tr
Rise time *
see diagram 3
TYP
1.5
µs
IB
Leakage current *
VB = 0.5 VBO max
see diagram 1
MAX
10
µA
* Electrical characteristic applicable in both forward and reverse directions.
** Connected in parallel with the devices.
ELECTRICAL CHARACTERISTICS
(Tj = 25
°C)
DIAGRAM 1 : Current-voltage characteristics
DIAGRAM 2 : Test circuit for output voltage
DIAGRAM 3 : Test circuit see diagram 2.
Adjust R for lp=0.5A
10mA
IBO
IB
- V
+ V
+ I F
- IF
0,5 VBO
VBO
V
10 k
500 k
220 V
50 Hz
0.1 F
D.U.T
V
O
R = 20
90 %
lp
10 %
tr
DB3 / DB4 / DC34
2/4
0
20
40
60
80
100
120
140
160
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Tamb ( C)
o
o
P (mW)
Fig.1 : Power dissipation versus ambient tempera-
ture (maximum values)
25
50
75
100
125
Tj( C)
o
1.08
1.06
1.04
1.02
1.00
VBO[Tj]
VBO[Tj=25 C]
o
Fig.2 : Relative variation of VBO versus junction
temperature (typical values)
0.01
0.1
1
10
100
1000
10000
tp ( s)
2
F = 100 Hz
Tj initial = 25 C