BT134_SERIES_triac
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Philips Semiconductors
Product specification
Triacs
BT134 series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated triacs in a plastic
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
envelope,
intended
for
use
in
applications
requiring
high
BT134-
500
600
800
bidirectional transient and blocking
BT134-
500F
600F
800F
voltage capability and high thermal
BT134-
500G
600G
800G
cycling
performance.
Typical
V
DRM
Repetitive peak off-state
500
600
800
V
applications include motor control,
voltages
industrial
and
domestic
lighting,
I
T(RMS)
RMS on-state current
4
4
4
A
heating and static switching.
I
TSM
Non-repetitive peak on-state
25
25
25
A
current
PINNING - SOT82
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
-800
V
DRM
Repetitive peak off-state
-
500
1
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave; T
mb ≤ 107 ˚C
-
4
A
I
TSM
Non-repetitive peak
full sine wave; T
j = 25 ˚C prior to
on-state current
surge
t = 20 ms
-
25
A
t = 16.7 ms
-
27
A
I
2t
I
2t for fusing
t = 10 ms
-
3.1
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 6 A; IG = 0.2 A;
on-state current after
dI
G/dt = 0.2 A/µs
triggering
T2+ G+
-
50
A/
µs
T2+ G-
-
50
A/
µs
T2- G-
-
50
A/
µs
T2- G+
-
10
A/
µs
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
˚C
T
j
Operating junction
-
125
˚C
temperature
T1
T2
G
1
2
3
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
µs.
August 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT134 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
full cycle
-
-
3.0
K/W
junction to mounting base
half cycle
-
-
3.7
K/W
R
th j-a
Thermal resistance
in free air
-
100
-
K/W
junction to ambient
STATIC CHARACTERISTICST
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BT134-
...
...F
...G
I
GT
Gate trigger current
V
D = 12 V; IT = 0.1 A
T2+ G+
-
5
35
25
50
mA
T2+ G-
-
8
35
25
50
mA
T2- G-
-
11
35
25
50
mA
T2- G+
-
30
70
70
100
mA
I
L
Latching current
V
D = 12 V; IGT = 0.1 A
T2+ G+
-
7
20
20
30
mA
T2+ G-
-
16
30
30
45
mA
T2- G-
-
5
20
20
30
mA
T2- G+
-
7
30
30
45
mA
I
H
Holding current
V
D = 12 V; IGT = 0.1 A
-
5
15
15
30
mA
V
T
On-state voltage
I
T = 5 A
-
1.4
1.70
V
V
GT
Gate trigger voltage
V
D = 12 V; IT = 0.1 A
-
0.7
1.5
V
V
D = 400 V; IT = 0.1 A;
0.25
0.4
-
V
T
j = 125 ˚C
I
D
Off-state leakage current