BT134_SERIES_triac
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V
D = VDRM(max);
-
0.1
0.5
mA
T
j = 125 ˚C
DYNAMIC CHARACTERISTICST
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BT134-
...
...F
...G
dV
D/dt
Critical rate of rise of
V
DM =67% VDRM(max);
100
50
200
250
-
V/
µs
off-state voltage
T
j = 125 ˚C; exponential
waveform; gate open
circuit
dV
com/dt
Critical rate of change of
V
DM = 400 V; Tj = 95 ˚C;
-
-
10
50
-
V/
µs
commutating voltage
I
T(RMS) = 4 A;
dI
com/dt = 1.8 A/ms; gate
open circuit
t
gt
Gate controlled turn-on
I
TM = 6 A; VD = VDRM(max);
-
-
-
2
-
µs
time
I
G = 0.1 A;
dI
G/dt = 5 A/µs;
August 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT134 series
Fig.1. Maximum on-state dissipation, P
tot, versus rms
on-state current, I
T(RMS), where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM, versus pulse width tp, for
sinusoidal currents, t
p ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS) ,
versus mounting base temperature T
mb.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb ≤ 107˚C.
Fig.6. Normalised gate trigger voltage
V
GT(Tj)/ VGT(25˚C), versus junction temperature Tj.
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
= 180
120
90
60
30
BT136
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
122
119
116
113
110
107
104
101
1
-50
0
50
100
150
0
1
2
3
4
5
BT136
Tmb / C
IT(RMS) / A
107 C
10us
100us
1ms
10ms
100ms
10
100
1000
BT136
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
T2- G+ quadrant
0.01
0.1
1
10
0
2
4
6
8
10
12
BT136
surge duration / s
IT(RMS) / A
1
10
100
1000
0
5
10
15
20
25
30
BT136
Number of cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
August 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT134 series
Fig.7. Normalised gate trigger current
I
GT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current I
L(Tj)/ IL(25˚C),
versus junction temperature T
j.
Fig.9. Normalised holding current I
H(Tj)/ IH(25˚C),
versus junction temperature T
j.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb, versus
pulse width t
p.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
T/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T/dt.
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
BT136
Tj / C
T2+ G+
T2+ G-
T2- G-
T2- G+
IGT(Tj)
IGT(25 C)
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
12
BT136
VT / V
IT / A
Tj = 125 C
Tj = 25 C